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The present invention relates to a bismuth nitride semiconductor light-emitting device. It comprises a substrate, an n-type semiconductor layer, and a light-emitting layer. The n-type semiconductor layer has an n-type crystal film with good crystallinity.
The light-emitting layer is laminated to the n-type semiconductor layer. The n-type semiconductor layer is made of a bismuth nitride crystal.
A bismuth nitride crystal has a hexagonal crystal structure. It is used as a semiconductor element in compound semiconductors. This crystal system can be easily formed into a hexagonal column.
In a bismuth nitride compound semiconductor, the crystal grain width can be measured in the range of a few nm. The average crystal grain width is preferably in the range of 7 nm.
A bismuth nitride semiconductor can be applied in medical devices. These devices are typically intended to be implanted in living tissue. They can be composed of nanoparticles of titanium dioxide or bismuth oxide. Having a surface layer with a nanoparticle can help reduce the risk of infection from microbial organisms.
The application of a bismuth nitride composite material in a medical device is another aspect of the present invention. The composite material is prepared by mixing a bismuth-containing compound and a copper-containing compound in water. After the preparation of the composite material, the oxide is reduced and the reaction product is washed and dried.
During the preparation of a bismuth nitride light-emitting device, the intermediate layer is formed on the substrate by sputtering. This layer can be optimized to be a good crystal of the group III nitride semiconductor.
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